The demonstration of exchange bias switching in antiferromagnet/ferromagnet structure


The identification of effective methods to manipulate both magnetization and exchange bias in thin antiferromagnet/ferromagnet films could facilitate the development of new types of spintronic devices. Magnetization switching could be achieved by inducing a phenomenon called spin-orbit torque (SOT) in a heavy metal layer adjacent to these films. However, so far, this design strategy has proved difficult to combine with both exchange bias switching and tunneling magnetoresistance measurements.





Like it? Share with your friends!

What's Your Reaction?

Angry Angry
0
Angry
Confused Confused
0
Confused
Buffoon Buffoon
0
Buffoon
Cry Cry
0
Cry
Cute Cute
0
Cute
WOW WOW
0
WOW
Dislike Dislike
0
Dislike
Fail Fail
0
Fail
Geek Geek
0
Geek
Like Like
0
Like
Source link

Send this to a friend