Imec introduces 2-D materials in the logic device scaling roadmap


The continual scaling of Si-based transistors is challenged by short channel effects that limit further gate length scaling. Field-effect transistors (FETs) with semiconducting transition metal dichalcogenides (MX2, such as WS2 or MoS2) as the semiconductor channel promise however to be relatively immune to these short channel effects. FETs with 2-D semiconductor channel owe this promise to the ability to make atomically thin channels combined with the theoretical ability to maintain higher carrier mobility—independent of channel thickness. These two properties give the gate voltage a better electrostatic control over the channel. Iuliana Radu, program director at imec, says, “2-D-FETs are considered prime candidates to further extend the logic device scaling roadmap. Our team at imec has set the scene for adopting these 2-D semiconductors into a 300mm integration flow—a key requirement for industrial adoption. We also obtained significant steps forward in improving device performance and in building fundamental understanding.”





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