A novel approach for improving gate-stack reliability


Bias temperature instability (BTI) is a well-known aging mechanism in metal-oxide-semiconductor field-effect transistors (MOSFETs), which can severely affect the device performance and reliability. It typically manifests itself as an undesirable progressive increase of the device threshold voltage and a decrease of the drain current. BTI is ascribed to the presence of defects in the gate dielectrics and at the interface with the Si channel, which can trap charge carriers from the device conduction channel.





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